GaN Process & Device Architect
9013
Posted: 05/01/2026
- Per Day Competitive
- Netherlands
- Semiconductor
- Permanent
GaN Process & Device Architect – RF Power Technologies
Location: Netherlands
Type: Full-time | R&D
Are you an expert in GaN-on-SiC technology and passionate about shaping the future of high-power RF applications? We’re looking for a GaN Process & Device Architect to lead next-generation technology architecture, device design, and process integration.
What You’ll Do
- Define and lead GaN/SiC HEMT technology architecture and process development
- Drive innovation in device physics, reliability physics, TCAD simulation, and characterization
- Collaborate with epitaxy and fab teams to optimize process uniformity and manufacturability
- Partner with reliability engineers to meet stringent reliability requirements
- Lead root cause investigations for device/process/reliability/yield improvements
- Benchmark competitor technologies and set next-generation GaN targets
- Interface with design and applications teams for technology-design co-optimization
What We’re Looking For
- MS or Ph.D. in Physics, Electronics, Chemistry, or related field
- 10–15 years of experience in GaN technology development
- Deep understanding of III-V epitaxy, front-end process integration, and reliability physics
- Experience with DOE, characterization, and failure analysis
- Familiarity with RF power applications is a strong plus
Preferred Skills
- Problem-solving for complex integration challenges
- Ability to lead multidisciplinary teams and drive results
- Strong communication, presentation, and reporting skills
Why Join Us?
- Work on cutting-edge GaN technology for next-gen RF power solutions
- Collaborate with top-tier teams and research partners in a fast-paced environment
Interested? Apply now or reach out for more details!
| #LI-JD1 |
James Dees
Managing Consultant